Red lasers grown by all-solid-source molecular beam epitaxy

We have prepared high-power 600 nm spectral band quantum well lasers using all-solid-source molecular beam epitaxy for layer growth. An output power up to 3 W in continuous wave mode has been demonstrated at the nominal wavelength of 670 nm, 2 W at 650 nm and 1 W at 630 nm. The threshold current densities are 350- for nm, 500- for nm and less than for nm. The characteristic temperature of threshold current falls within the range of K at nm and is about 60 K at nm. The slope efficiency is between 0.50 and 0.58 W per facet for uncoated devices of 1 mm in cavity length. Maximum observed wall-plug efficiencies are between 30 and 48% for mirror coated lasers. Preliminary lifetests have been carried out for the 650 and 670 nm lasers suggesting that these lasers will be quite reliable in operation.