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Epitaxial films of Hg 1-x Mn x Te (MMT), between 2 and 10 mu m thick, have been grown by MOVPE on GaAs and CdZnTe substrates and their perfection assessed by high-resolution X-ray scattering and topography. The full width at half height maximum (FWHM) was found to vary inversely with the MMT layer thickness, independently of Mn concentration or substrate type. A general increase in integrated intensity with thickness was observed, though with substantial variations between individual data points. Double-axis topography and triple-axis scattering showed that the greatest contribution to the double-axis FWHM came from tilts between subgrains within which the strain was small. Little difference was seen either in the double-axis FWHM or triple-axis isointensity contours between thick MMT layers grown on GaAs or CdZnTe substrates. The model of Ayers et al. does not appear to be applicable to the system, which incorporates a CdTe buffer layer on the GaAs.
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Hallam et al. (1993) studied this question.
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