Recombination loss at dislocations is the predominant loss mechanism in thin-film GaAs solar cells on Si substrates. Cell parameters are calculated based on a simple model in which dislocations act as recombination centers. Excellent agreement is observed between theory and experiment. It is indicated that one could fabricate thin-film GaAs solar cells with an efficiency of 17–18% on Si substrates if the dislocation density is less than 5×105 cm−2.
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Yamaguchi et al. (1986) studied this question.
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