Junction current and luminescence near a dislocation or a surface

Closed-form solutions (integral representations) are obtained for the charge density and current density in the vicinity of a dislocation or a surface which pierces a junction at right angles. The total reduction in luminescence and increase in junction current are obtained as functions of two dimensionless ratios, ε, the recombination-length/diffusion-length ratio, and η, the radius-of-dislocation/diffusion-length ratio, where recombination length a=D/s is the diffusion constant over surface-recombination velocity.