Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region

InGaP InAlP quantum well structures for the visible wavelength region have been grown by molecular beam epitaxy for the first time. The formation of the superlattice structure was confirmed for the multiquantum well structure wafer by double crystal x-ray diffraction measurement and sputtering Auger electron measurement. Photoluminescence measurement at 77 K on the multilayer structure wafer with different thickness InGaP well layers showed that quantum levels were formed in InGaP well layers.