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Review demonstrates the benefits and drawbacks of nitric oxide interface nitridation in silicon carbide MOSFETs, highlighting performance variations across crystal planes.
After years of research, silicon carbide (SiC) power devices are being implemented in practical applications. In particular, SiC-based meatal-oxide-semiconductor field-effect transistors (MOSFETs) are expected to be key components of next-generation power modules. Since the properties of MOS structures are crucial to device performance and reliability, achieving a high-quality interface is very important. Nitridation of SiO 2 /SiC interfaces is widely used in the SiC industry for improving interface properties. Currently, high-temperature annealing in nitric oxide is the most common method, but its effectiveness is quite limited. Moreover, interface nitridation is also essential for advanced vertical-trench MOSFETs with MOS channels formed on non-basal planes. This review presents a comprehensive picture of research on nitrided SiO 2 /SiC interfaces based on physical and electrical characterizations. Specifically, we focused on the effects and drawbacks of interface nitridation and described a thorough benchmarking of nitrided MOS devices on basal and non-basal planes.
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Watanabe et al. (2024) studied this question.
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