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December 1, 1985IEEE Transactions on Electron Devices

High light output-power single-longitudinal-mode semiconductor laser diodes

K. Kobayashi I. Mito

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Abstract

Issues related to realizing high light output-power single-longitudinal-mode InGaAsP/InP DFB LD's have been studied experimentally and theoretically. Asymmetry in the reflections as the front and rear facets of DFB cavity has been found to result in enhanced single-longitudinal-mode selectivity and higher light output power from the front facet. Single-longitudinal-mode CW light output power as high as 103 mW has been obtained in a 1.3-µm DFB-DC-PBH LD with facet reflectivities of 2 and 80-90 percent. Low internal quantum efficiency is pointed out to bean important problem for 1.5-µLD's.

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Cite This Study

Kobayashi et al. (1985) studied this question.

synapsesocial.com/papers/6a854468b890443775b2f26a https://doi.org/10.1109/t-ed.1985.22389

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