Zinc doped GaAs0.6P0.4 LEDs are fabricated by semi-closed diffusion method to achieve the junction depth of 3.3 μm in the temperature range from 600 to 800 °C. Optical and electrical characteristics evaluation indicate that the degradation of red light emission in GaAs0.6P0.4 LEDs is mainly due to deep trapping levels. DLTS results also show that the Ev + 0.64 eV hole trap plays the major role in forming the radiative efficiency degradation of the red light emission in GaAs0.6P0.4 LEDs.
No takes yet. Share an insight, caveat, or question.
Lou et al. (1983) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: