Injection-locking characteristics of gain-guided diode laser arrays with an ‘‘on-chip’’ master laser

We report measurements of the injection-locking characteristics of a high-power continuous-wave diode laser array with an on-chip independently controlled master laser. This integrated injection-locked array emits a near-diffraction-limited single-lobed output beam at cw power levels up to 220 mW/facet. By controlling the current to the master laser, the single-lobed output beam can be electronically steered over a far-field angle of >1.7°. We also report preliminary studies of the coupling interaction in these integrated devices.