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The three-dimensional monolithic microwave/millimeter wave integrated circuits (MMIC) structure that places thin polyimide-film layers on wafers significantly increases the integration level of MMICs. We developed 9.2-12 GHz receiver and 95-14 GHz transmitter chips with 20 dB gain using the three-dimensional MMIC technology. The receiver chip includes a four-stage front-end amplifier, a local oscillator (LO) amplifier, and an image-rejection mixer in a 2/spl times/2 mm chip. The transmitter chip also includes an IF amplifier with balanced outputs, an LO amplifier, an RF buffer amplifier, and a balanced upconverter in a 1.9/spl times/1.9 mm chip. The integration levels of these chips are nearly three times higher than those of conventional planar devices. The design method of each function block, such as the amplifier and mixer, is also described.
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Toyoda et al. (1996) studied this question.
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