Charge versus voltage and internodal capacitance versus voltage characteristics are calculated for a short-channel MOSFET using a unified model of the dc device behavior. Velocity saturation is an important feature in the results. The importance of charge and capacitance calculations is assessed using a high speed MOS transient simulation. Device current and gate charge are determined to be the important ingredients for accurate simulation.
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Taylor et al. (1982) studied this question.
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