Application of Supercritical CO[sub 2] Fluid for Dielectric Improvement of SiO[sub x] Film

In this paper the supercritical carbon dioxide ( SC C O 2 ) fluid technology is employed to improve the quality of E-gun evaporation deposited silicon oxide ( Si O x ) film at 150 ° C . After the treatment of SC C O 2 fluid mixed with ethyl alcohol and pure H 2 O , the oxygen content of Si O x film increases and the traps within Si O x are terminated by forming Si–O–Si feature bonds. The leakage current density reduces from 10 − 2 to 3 × 10 − 8 A ∕ cm 2 at an electric field of 3 MV ∕ cm due to the passivation of traps, and the hysteresis effect in the capacitance–voltage curve is eliminated.