The results of optical-pump THz-probe experiment on InAs/GaAs quantum dot structures are discussed in this paper. In InAs/GaAs quantum dot strutures the free carrier lifetime is observed to be substantially shorter than that in bulk GaAs, especially at weak pump powers. We attribute this behaviour mainly to the trapping of free carriers into the quantum dots.
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Turchinovich et al. (2003) studied this question.
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