Investigations of Radiation Damage Production in Ion Implanated Silicon

Radiation damage production in ion implanted silicon is investigated by backscattering technique, ESR, optical, and electrical methods. The distributions of total defect density, the concentrations of various point defects, and the amorphous phase concentration as well as the corresponding absorption coefficient and refractive index changes, the change of electrical sheet resistivity, and the thermal stability of the damage are measured as a function of the implantation parameters. These results are compared with basic conceptions of energy deposition into nuclear and ionization processes, nucleation of stable defects, and amorphization by damage region overlap.