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Amorphous germanium layers are produced by Ge ion implantation. The kinetics of epitaxial regrowth are studied using Raman spectroscopy. The variation of the growth rate of crystallization (in a 〈111〉 direction) versus temperature, in the range 340 to 380 °C, is deduced from isothermal runs. The results are shown to be in good agreement with previously published results obtained by channeling and conductivity measurements.
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Zellama et al. (1979) studied this question.
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