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October 1, 1970Applied Physics Letters

Effect of Ion-Implantation Damage on the Optical Reflection Spectrum of Gallium Arsenide

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Authors

GSG. A. ShifrinHRL Laboratories (United States)RHRobert G. HunspergerCalifornia Institute of Technology

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Shifrin et al. (1970) studied this question.

synapsesocial.com/papers/6a8587b068d2ad262cd5993ahttps://doi.org/10.1063/1.1653399
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Electrical Properties of Zinc and Cadmium Ion Implanted Layers in Gallium Arsenide1969 · 43 citations
  2. 2ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION1969 · 60 citations
  3. 3CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 - keV ANTIMONY ION BOMBARDMENT OF SILICON1969 · 26 citations
  4. 4Optical Reflection Studies of Damage in Ion Implanted Silicon1970 · 56 citations
  5. 5The influence of temperature and channeling on ion-bombardment damage in Si1968 · 44 citations