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April 1, 1969Applied Physics Letters

ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION

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Authors

SKStephen KurtinCalifornia Institute of TechnologyGSG. A. ShifrinHRL Laboratories (United States)TMT. C. McGillOklahoma State University

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Kurtin et al. (1969) studied this question.

synapsesocial.com/papers/6a8587b168d2ad262cd59940https://doi.org/10.1063/1.1652788
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Also Consider

Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS1967 · 117 citations
  2. 2The influence of temperature and channeling on ion-bombardment damage in Si1968 · 44 citations