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January 28, 2021Crystal Growth & Design

Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers

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Authors

HSHryhorii StanchuYMYuriy I. MazurKPK. C. Pandey

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Stanchu et al. (2021) studied this question.

synapsesocial.com/papers/6a85882f95de83b44dd59cd6https://doi.org/10.1021/acs.cgd.0c01525
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Also Consider

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  4. 4Thermally activated diffusion and lattice relaxation in (Si)GeSn materials2020 · 21 citations
  5. 5Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate2013 · 127 citations