Comment on ’’A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy’’

A recent paper by Scott, Duggan, Dawson, and Weimann on the photoluminescence of beryllium-doped GaAs grown by molecular beam epitaxy is compared and contrasted with earlier studies by Künzel and Ploog. We find that, contrary to a statement by Scott, Duggan, Dawson, and Weimann, the low-temperature photoluminescence spectra of their GaAs samples grown from an As4 source do exhibit new bound exciton lines previously reported by Künzel and Ploog. The source of confusion is identified as an incorrect assignment of near band-gap spectral features of GaAs layers with (NA−ND)≳1016 cm−3 used by Scott, Duggan, Dawson, and Weimann.