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February 1, 1981Journal of The Electrochemical SocietyOpen Access

The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy

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Authors

KPK. PloogInstitute of PhysicsAFA. FischerTechnion – Israel Institute of TechnologyHKH. KünzelFraunhofer Institute for Telecommunications, Heinrich Hertz Institute

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Ploog et al. (1981) studied this question.

synapsesocial.com/papers/6a92ec7a9b5834d199bb646dhttps://doi.org/10.1149/1.2127430
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