We demonstrate for the first time low-loss optical guiding in In-doped GaAs. Ridge waveguides are made with single In0.012Ga0.988As ternary layers and In0.2Ga0.8As-GaAs superlattices. Attenuation constants of ∼1.3 dB/cm are measured and the principal loss mechanism is identified to be scattering at the ridge walls. It is expected that improved fabrication techniques will lead to guides with attenuation ≤0.5 dB/cm.
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Das et al. (1986) studied this question.
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