The InxGa1−xAs/InyGa1−yAs strained-layer superlattices can be grown lattice matched to an InP substrate if proper compositions and thicknesses are chosen. Such structures were grown by molecular-beam epitaxy. The wavelength range covered by this material is from 1.65 μm to beyond 2 μm. Structural (double x-ray diffraction) and optical (absorption) characterizations were performed and quantitatively interpreted; they show the excellent properties of these structures.
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Quillec et al. (1986) studied this question.
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