This paper presents a thin amorphous Si (a-Si) on Ti as an oxidation-resistant material for a self-aligned TiSi2process. It is shown that a thin a-Si over Ti film will greatly suppress the interaction between Ti and ambient gases (N2and O2) during the thermal TiSi2formation cycle in conventional N2furnance while maintaining satisfactory self-aligned property after silicidation at a temperature below 630°C.
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Tseng et al. (1986) studied this question.
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