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February 1, 1985IEEE Transactions on Electron Devices

Development of the self-aligned titanium silicide process for VLSI applications

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Authors

MAM.E. AlperinTHT.C. HollowaySiberian State Medical UniversityRHR.A. HakenTexas Instruments (United States)

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Alperin et al. (1985) studied this question.

synapsesocial.com/papers/6aa303ea4eb0fe97dac228ebhttps://doi.org/10.1109/t-ed.1985.21923
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.1980 · 131 citations
  2. 2A transmission line model for silicided diffusions: Impact on the performance of VLSI circuits1982 · 111 citations
  3. 3Refractory metal silicides for VLSI applications1981 · 70 citations