The differential external quantum efficiency ηextof Fabry-Perot-type GaAs injection lasers has been measured as a function of the mean reflectivityR. By evaporation of antireflective films,Rhas been varied between 0.25 and 0.06. The observed increase of ηextwith decreasingRis interpreted in terms of a simple model. Values for the optical losses α, the gain factor β, and the internal quantum efficiency at 77°K are obtained for individual diodes.
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Ulbrich et al. (1970) studied this question.
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