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November 15, 1987Journal of Applied Physics

An optimized i n s i t u argon sputter cleaning process for device quality low-temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and p n junction characterization

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WBWolfgang BürgerSozialwissenschaftliche Forschung und BeratungRRR. ReifMassachusetts Institute of Technology

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Bürger et al. (1987) studied this question.

synapsesocial.com/papers/6a85c09a37bcb8373dadbab8https://doi.org/10.1063/1.339099
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 ev1961 · 824 citations
  2. 2Low Temperature Silicon Epitaxy by Hot Wall Ultrahigh Vacuum/Low Pressure Chemical Vapor Deposition Techniques: Surface Optimization1986 · 103 citations
  3. 3Argon Content in (111) Silicon for Sputtering Energies below 200 eV1970 · 21 citations
  4. 4Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study1972 · 234 citations