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September 1, 1981Journal of Applied Physics

Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy

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Authors

SISubramanian S. IyerUCLA HealthRMRobert A. MetzgerAdvocate Children's HospitalFAF. G. AllenJet Propulsion Laboratory

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Iyer et al. (1981) studied this question.

synapsesocial.com/papers/6a85c0ffc006613b201af293https://doi.org/10.1063/1.329494
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Also Consider

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  1. 1Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)1980 · 132 citations
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  5. 5Arbitrary doping profiles produced by Sb-doped Si MBE1978 · 84 citations