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This paper describes the design and measurement of a wideband (W-band) passive radiometer chip developed in a standard 0.12-¿m SiGe BiCMOS technology (IBM8HP, ft/fmax= 200/265 GHz). Design equations, simulations, and measurements are presented for a 94-GHz square-law detector and wideband low noise amplifier, and an 80-110-GHz single-pole double-throw switch. A total-power radiometer is presented, which can achieve a temperature resolution of ¿ 0.69 K (30-ms integration time) with periodic calibration or chopping above 10 kHz. A switched Dicke radiometer chip is also presented, which addresses the 1/f noise of the total-power radiometer, and can achieve a temperature resolution of 0.83 K with a 30-ms integration time. This performance is comparable to current III-V imaging modules, and demonstrates, to our knowledge, the first implementation of a SiGe or CMOSW-band radiometer on a single chip.
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May et al. (2010) studied this question.
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