A W-Band Medium Power Amplifier in 90 nm CMOS

A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (Psat) is 12 dBm between 90 and 100 GHz forVdsof each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.