High electric field transport in n-Ga1−xAlxAs semiconductor alloys for composition x range from 0.0 to 0.5 is studied theoretically. The calculations are based on a shifted Maxwellian approach for the three-valley conduction-band model. An expression for the alloy scattering probability involving no fitting parameters is used in these calculations. The calculations predict a close to linear decrease of peak velocity with an increase in the alloy composition x. The absence of the onset of negative differential mobility at x≥0.35 is found.
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Hava et al. (1993) studied this question.
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