Answers are grounded in this paper and cite their sources.
Structural and electronic properties of Al0.3Ga0.7As/GaAs heterojunction and GaAs pn junction systems are investigated by cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/S). The cross-sectional samples were prepared by passivating ex situ with a sulfide [(NH4)2S] solution and were transferred into an ultra-high vacuum system for STM/S studies. It is found that passivated samples are advantageous for the measurements of scanning tunneling spectroscopy. The STM/S results and the experimental details are reported.
No takes yet. Share an insight, caveat, or question.
Gwo et al. (1994) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: