A novel and simple technique is proposed for the fabrication of gated single crystalline diamond Spindt-type emitter array with a small and precise gate aperture. An interesting silicon oxide deposition pattern `sphere on cone' enabled controlled gate opening by wet chemical etching. Using this technique a highly uniform Spindt-type emitter array with a specified gate aperture of 1.4 µm has been fabricated. Study on controlled field emission indicates the normal operation of the fabricated emitter.
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Vinod et al. (2005) studied this question.
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