Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Scanning capacitance microscopy studies of processed fin structures for fin field-effect transistor (FinFET) are presented. We characterized carrier profiling of fins as a function of implantation conditions. The results are confirmed by high angle annular dark field transmission electron microscopy study and qualitatively agree with simulations. The techniques we report can be used in conjunction with implantation and simulation to characterize the dopant profile of FinFET structures and further optimize FinFET processing parameters.