Diamond films doped with boron were fabricated by the thermal filament CVD method. Powdered B 2 O 3 was used as the doping source. The films were identified as diamond by means of several methods including Raman spectroscopy. The resistivity of the films was inversely proportional to the B / C ratio over four orders. The temperature dependence of current was measured and to fit this result to the theoretical calculation, the activation energy was evaluated.
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Okano et al. (1989) studied this question.
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