Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in In0.35Ga0.65As Multiple Quantum Dot Photodetector

Near-infrared photoresponse is observed in the temperature range of 77-300 K for a photodetector fabricated from undoped In0.35Ga0.65As/GaAs multiple quantum dots grown in a molecular beam epitaxy system. The detectivity is estimated to be on the order of 3.70 times 109and 2.70 X 107cm .radicHz/W at 77 and 300 K, respectively. The reduction of the detectivity is attributed to the increase of the dark current as the temperature is increased. The photoresponse is explained in terms of several interband transitions. These transitions are found to be in good agreement with the self-consistent theoretical calculations.