Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown on an Si substrate. The device showed acceptable static characteristics. A novel device structure was devised, which enabled the use of conventional equipment for silicon devices, and eliminated dedicated processes for a stable and rigid SiC film.
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Kondo et al. (1986) studied this question.
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