Temperature-dependent interface morphology and Schottky barrier evolution for Au/InP(110)

Results of extensive high-resolution synchrotron radiation photoemission studies reveal significant differences between Au/InP(110) interfaces formed at 300 and at 60 K. At 300 K, Au atom deposition results in substantial substrate disruption and, for coverages ≥2 Å, a thickening Au overlayer containing intermixed In and P atoms. For atom deposition at 60 K, the amount of substrate disruption is not significantly changed, but surface segregation of the released In and P atoms is largely, though not entirely, inhibited. These reults show that the distinctly different temperature-dependent Schottky barrier evolution on n- and p-type InP(110) cannot be attributed to thermally controlled reaction since there is little such control. Low-temperature changes in Fermi-level pinning for Au coverages at 2–4 Å appear related to the development of metallic character in the overlayer.