The ordered 1×{}1 overlayer of Sb on GaAs(110) has been studied with angle-resolved photoemission. The experimentally determined energy dispersions of three surface-state bands are compared with the results of previously reported theoretical calculations based on a surface model favored by low-energy electron diffraction analysis. Although there is a qualitative agreement between experiment and theory, the results suggest that a modification of the model is needed in order to obtain a better description of the GaAs(110)1×{}1-Sb surface.
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M�rtensson et al. (1986) studied this question.
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