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A new luminescence band is observed in optically excited (Al, Ga)As multilayer structures that were previously subjected to intense laser irradiation. The band is shifted by 90 meV to a longer wavelength with respect to the band-band recombination of regions not exposed to radiation. The laser power density necessary for processing is 0.55 MW/cm2 for times of ∼100 μsec. The processed region is located at the pn junction with a width of 0.7 and a depth of 0.15 μm.
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Gilgen et al. (1981) studied this question.
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