Answers are grounded in this paper and cite their sources.
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.
No takes yet. Share an insight, caveat, or question.
Scovell et al. (1980) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: