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July 1, 1981Applied Physics Letters

Transient annealing of arsenic-implanted silicon using a graphite strip heater

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Authors

BTB-Y. TsaurMIT Lincoln LaboratoryJDJ.P. DonnellyNorthwell HealthJFJohn C. C. FanChestnut Hill College

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Tsaur et al. (1981) studied this question.

synapsesocial.com/papers/6a865d8bb81bbc5ca8639c97https://doi.org/10.1063/1.92529
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Annealing of ion-implanted silicon by an incoherent light pulse1978 · 33 citations
  2. 2Solar furnace annealing of amorphous Si layers1979 · 26 citations
  3. 3The Diffusion of Ion‐Implanted Arsenic in Silicon1975 · 115 citations
  4. 4Electrical Behavior of Group III and V Implanted Dopants in Silicon1969 · 156 citations
  5. 5Direct observations of defects in implanted and postannealed silicon wafers1976 · 40 citations