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May 1, 1985Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Modulation doping in Ge(x)Si(1−x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration

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RPR. PeopleAlcatel Lucent (Germany)JBJ. C. BeanStevens Institute of TechnologyDLD. V. LangAT&T (United States)

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People et al. (1985) studied this question.

synapsesocial.com/papers/6a8679c027bc8e2c31cc6b68https://doi.org/10.1116/1.573328
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