Photoluminescence in strained GaSb/InGaSb quantum wells by metalorganic chemical vapor deposition

GaSb/In0.19Ga0.81Sb single quantum well structures have been grown successfully by metalorganic chemical vapor deposition. The conduction band to mj=±3/2 heavy hole (1C-1HH) transition peak was observed in GaSb/In0.19Ga0.81Sb single quantum well (SQW) with the well width of 100–270 Å. From the excitation power dependence of the photoluminescence spectra, the 1C-1HH transition peak was still observed at low excitation power, 0.31 W/cm2, indicating that the carrier confinement in the well is good. From the temperature dependence of emission intensity of the 1C-1HH transition, the nonradiative recombination centers were few and less than that of the D°-A (donor-acceptor) transition arising from the GaSb barrier layers at temperatures below 30 K. This indicates the good quality of our SQW structure. The dependence of the 1C-HH transition energy was compared with the theoretical results using a strained model.