Answers are grounded in this paper and cite their sources.
Schottky devices were fabricated by thermal evaporation of indium on chemically synthesized polyaniline, poly(o-anisidine), and poly(aniline-co-ortho-anisidine) copolymer. Electrical characterization of each of these devices was carried out using current (I)-voltage (V) and capacitance (C)-voltage (V) measurements. The value of various junction parameters such as rectification ratio, ideality factor, and barrier heights of an In/poly(aniline-co-o-anisidine) Shootky device were found to be 300, 4.41, and .4972 V compared to the values of 60, 5.5, and 0.5101 V obtain for an In/polyaniline device, respectively.
No takes yet. Share an insight, caveat, or question.
Pandey et al. (1997) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: