Structural and electrical characteristics of Ge and Se implanted InP after rapid thermal annealing

The electrical activation of Ge and Se implanted into <100≳ InP at elevated temperatures and the annealing of the implantation-induced disorder have been investigated by differential Hall/resistivity measurements, Rutherford backscattering spectrometry, and transmission electron microscopy. At implantation temperatures below 170 °C, an amorphous layer is created by the implantation process. After recrystallization by rapid thermal annealing of the amorphized layer, a localized defect band was found, which gives rise to a dip (M shape) in the carrier density profile. This band is believed to be caused by a stoichiometric imbalance of In and P. For implantation temperatures above 170 °C, the samples remain crystalline during implantation and as a result, no localized defect band is observed.