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Kinetics of secondary structure defect formation in B+ ion-implanted Si crystals are investigated in isochronal and isothermal annealing experiments. The implantation dose is below the critical dose which forms a continuous amorphized layer. On the basis of quantitative results obtained an analysis of the behaviour of various defects is performed and the main factors and mechanisms which determine the evolution of such structures are established.
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Комаров et al. (1981) studied this question.
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