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August 1, 1982Journal of Applied Physics

Carbon tetrachloride plasma etching of GaAs and InP: A kinetic study utilizing nonperturbative optical techniques

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Authors

RGRichard A. GottschoLam Research (United States)GSG. SmolinskyAT&T (United States)RBRandolph H. BurtonAT&T (United States)

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Gottscho et al. (1982) studied this question.

synapsesocial.com/papers/6a8695476e2b279cf517abe1https://doi.org/10.1063/1.331433
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