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November 1, 1985Applied Physics Letters

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

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Authors

JŁJ. ŁagowskiInstitut Mines-TélécomDLD. G. LinMassachusetts Institute of TechnologyTCT.-P. Chen

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Łagowski et al. (1985) studied this question.

synapsesocial.com/papers/6a86b18537e82e140d153db3https://doi.org/10.1063/1.95983
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