Continuous, incoherent light from a xenon arc lamp has been used to anneal radiation damage in <100> silicon single crystals produced by implantation of 30−keV arsenic or antimony ions to doses between 1×1015 cm−2 and 1×1016 cm−2. The recrystallized layers have been characterized by Rutherford-backscattering spectroscopy, ion-channeling, Transmission Electron Microscopy, and sheet-resistivity measurements.
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Larsen et al. (1983) studied this question.
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