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August 24, 1998Applied Physics Letters

AlGaN/GaN high electron mobility field effect transistors with low 1/f noise

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Authors

MLM. E. LevinshteĭnIoffe InstituteSRSergey RumyantsevUniversity of California, RiversideRGR. GaškaSensor Electronic Technology (United States)

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Levinshteĭn et al. (1998) studied this question.

synapsesocial.com/papers/6a86ca72d75f6552a082aaa7https://doi.org/10.1063/1.122093
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